The pulse shape of a passively Q-switched microchip laser

被引:26
作者
Erneux, T
Peterson, P
Gavrielides, A
机构
[1] Free Univ Brussels, B-1050 Brussels, Belgium
[2] USAF, Res Labs, Nonlinear Opt Ctr Technol, AFRL DELO, Kirtland AFB, NM 87117 USA
关键词
D O I
10.1007/s100530050565
中图分类号
O43 [光学];
学科分类号
070207 [光学]; 0803 [光学工程];
摘要
The shape of the intensity pulse of a passively Q-switched microchip laser is investigated numerically and analytically. Our analysis is motivated by independent microchip laser experiments exhibiting nearly symmetric pulses in the case of a semiconductor saturable absorber and asymmetric pulses in the case of a solid state saturable absorber. Asymptotic methods are used to determine limiting behaviors of the pulse shape for both symmetric and asymmetric pulses. In the first case, we determine a sech(2) solution parametrized by one parameter which can be determined by solving two coupled nonlinear algebraic equations. In the second case, the pulse solution is decomposed into two distinct approximations exhibiting different amplitude and time scares properties. We review earlier approximations of the repetition rate and the pulse width.
引用
收藏
页码:423 / 431
页数:9
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