High figure of merit in Eu-filled CoSb3-based skutterudites

被引：207

作者：

Lamberton, GA ^{[1
]}

Bhattacharya, S

Littleton, RT

Kaeser, MA

Tedstrom, RH

Tritt, TM

Yang, J

Nolas, GS

机构：

[1] Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA

[2] GM Corp, R&D & Planning, Warren, MI 48090 USA

[3] Univ S Florida, Dept Phys, Tampa, FL 33620 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 04期

关键词：

D O I：

10.1063/1.1433911

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report measurements of electrical resistivity, thermopower, thermal conductivity, and Hall coefficient of polycrystalline Eu-doped CoSb3-based skutterudites with compositions Eu0.20Co4Sb12, Eu0.43Co4Sb11.59Ge0.31, and Eu0.42Co4Sb11.37Ge0.50. The relatively high mobility of these compounds, as compared to that of La- and Ce-filled skutterudites, may play a role in the large thermoelectric figure of merit (ZT>1 at 700 K) of Eu0.42Co4Sb11.37Ge0.50. We discuss the significant potential of these compounds for thermoelectric applications. (C) 2002 American Institute of Physics.

引用

页码：598 / 600

页数：3

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