Process optimization of a chemically amplified negative resist for electron beam exposure and mask making applications

被引：18

作者：

Ainley, E

Nordquist, K

Resnick, DJ

Carr, DW

Tiberio, RC

机构：

[1] Motorola, Tempe, AZ 85284

[2] Cornell Nanofabrication Facility, Cornell University, Ithaca

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 46卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0167-9317(99)00108-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

NEB-22, a chemically amplified negative tone resist has been formulated by Sumitomo for e-beam lithography direct write and mask making applications. The resist has exhibited excellent characteristics which would also make it applicable for use in a SCALPEL exposure tool.(1,2) The initial processing results for Sumitomo NEB-22A5 material demonstrated extremely high resolution capabilities with excellent exposure latitude. Although the process worked well for many direct write and mask applications, improvements were needed to address SCALPEL concerns. The process was modified to maintain sensitivity and optimize resolution, exposure latitude and FEB latitude. Excellent results were obtained in a 200 nm film of NEB-22 with new process parameters.

引用

页码：375 / 378

页数：4