Ultralight lithography

被引：2

作者：

Harned, N ^{[1
]}

机构：

[1] Silicon Valley Grp Inc, Extreme Ultraviolet Program, San Jose, CA 95131 USA

来源：

IEEE SPECTRUM | 1999年 / 36卷 / 07期

关键词：

D O I：

10.1109/6.774963

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As ICs shrink to accommodate higher speeds and lower power consumption, production-worthy lithographic tools capable of patterning ultra-small features onto wafers are starting to be realized. One such tool, a 157-nm tool with light of that wavelength from a fluorine laser, is being developed by the Silicon Valley Group. This 157-nm lithography, called extreme ultraviolet, will use a wavelength of only 13.4 nm and will also require a purely reflective optical system.

引用

页码：35 / 40

页数：6