Advanced ALE processes of amorphous and polycrystalline films

被引:93
作者
Ritala, M
机构
[1] Department of Chemistry, University of Helsinki, FIN-00014 Helsinki
基金
芬兰科学院;
关键词
review; atomic layer epitaxy (ALE); amorphous thin films; polycrystalline thin films;
D O I
10.1016/S0169-4332(96)01004-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Due to its distinctive self-limiting growth process, Atomic Layer Epitaxy (ALE) technique exhibits a unique combination of advantageous features. In this paper, the benefits and potentials of ALE in growth of amorphous and polycrystalline films will be discussed using some selected processes as examples. These processes include low temperature deposition of high quality nanolaminate dielectrics, controlled deposition of optical multilayers, growth of low resistivity transition metal nitrides using elemental zinc as a reducing agent, and preparation of ZnS1-xSex solid solutions via surface anion substitution reactions. The major drawback of ALE, its slowness, and the possibility of overcoming this problem via large-batch processing will also be discussed.
引用
收藏
页码:223 / 230
页数:8
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