Gain trimming of the resonant characteristics in vertically coupled InP microdisk switches

被引:20
作者
Djordjev, K [1 ]
Choi, SJ [1 ]
Choi, SJ [1 ]
Dapkus, PD [1 ]
机构
[1] Univ So Calif, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA
关键词
D O I
10.1063/1.1476701
中图分类号
O59 [应用物理学];
学科分类号
摘要
InP, vertically coupled microdisk resonator/waveguide switches with a gain active region are demonstrated. The devices exhibit single-mode operation, large free-spectral range of 10 nm, and a high-quality factor of 5700. The introduction of a quantum-well region inside the cavity provides a way of gain trimming the resonant characteristics. Active switches, routers, and filters with tunable bandwidth based on these devices are envisioned as part of a wavelength division multiplexing system. (C) 2002 American Institute of Physics.
引用
收藏
页码:3467 / 3469
页数:3
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