Analysis of interface states of Al/TiO2/Si0.3Ge0.7 MIS structures using the conductance technique

被引：21

作者：

Chakraborty, S ^{[1
]}

Bera, MK

Bose, PK

Maiti, CK

机构：

[1] Indian Inst Technol, Dept Elect, Kharagpur 721302, W Bengal, India

[2] Indian Inst Technol, ECE, Kharagpur 721302, W Bengal, India

[3] Jadavpur Univ, Dept Mech Engn, Kolkata 700032, W Bengal, India

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 03期

关键词：

D O I：

10.1088/0268-1242/21/3/022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TiO2 films have been deposited at a low temperature (similar to 150 degrees C using titanium tetrakis isopropoxide (TTIP) as an organometallic precursor oil Si0.3Ge0.7 heterolayers by a microwave plasma-enhanced chemical vapour deposition system. Interfacial properties of the as-deposited films have been characterized using capacitance-voltage and conductance-voltage techniques measured at different frequencies. The energy distribution of interface states and the relaxation time have been determined from G(p/omega)) versus omega analysis. A D-it level of AI/TiO2/SiGe MIS capacitors in the range of 2.87 x 10(11) eV(-1) cm(-2) (in E-C-0.446) eV to 5.04 x 10(11) eV(-1) cm(-2) (in E-C-0.696) eV has been observed from conductance measurements.

引用

页码：335 / 340

页数：6

共 27 条

[1]

[Anonymous], 2001, BOCARATON TAYLOR FRA

[2]

Bai W.P., 2003, 2003 Symposiums on VLSI Technology, P121

[3] MOSFET transistors fabricated with high permitivity TiO2 dielectrics [J].

Campbell, SA ;

Gilmer, DC ;

Wang, XC ;

Hsieh, MT ;

Kim, HS ;

Gladfelter, WL ;

Yan, JH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (01) :104-109

[4]

Chakraborty S, 2004, INT CONF MICROELECTR, P483

[5]

Chui CO, 2002, IEEE ELECTR DEVICE L, V23, P473, DOI [10.1109/LED.2002.801319, 10.1009/LED.2002.801319]

[6]

Das S, 2004, INT CONF MICROELECTR, P479

[7]

GOU X, 1998, IEEE ELECTR DEVICE L, V19, P207

[8] High hole mobility in Si0.17Ge0.83 channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition [J].

Höck, G ;

Kohn, E ;

Rosenblad, C ;

von Känel, H ;

Herzog, HJ ;

König, U .

APPLIED PHYSICS LETTERS, 2000, 76 (26) :3920-3922

[9] Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures [J].

Irisawa, T ;

Tokumitsu, S ;

Hattori, T ;

Nakagawa, K ;

Koh, S ;

Shiraki, Y .

APPLIED PHYSICS LETTERS, 2002, 81 (05) :847-849

[10] Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric [J].

Kang, L ;

Lee, BH ;

Qi, WJ ;

Jeon, Y ;

Nieh, R ;

Gopalan, S ;

Onishi, K ;

Lee, JC .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (04) :181-183

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