First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP-material system

被引：30

作者：

Kunert, B ^{[1
]}

Reinhard, S

Koch, J

Lampalzer, M

Volz, K

Stolz, W

机构：

[1] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[2] Akzo Nobel HPMO GmbH, D-35041 Marburg, Germany

[3] NAsP III V GmbH, D-35041 Marburg, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 | 2006年 / 3卷 / 03期

关键词：

D O I：

10.1002/pssc.200564124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum well heterostructures (QWH) in the novel dilute nitride Ga(NAsP)/GaP-material system have been grown pseudomorphically strained to GaP-substrate by metal organic vapour phase epitaxy (MOVPE). The high crystalline perfection has been determined by detailed structural analysis applying high-resolution X-ray diffrcation (XRD). The active QWH have been embedded in (AlGa)P/GaP-waveguide structures. Electrical injection lasing has been verified for broad area laser devices at low temperatures (80K - 150K) for the first time in this novel material system. (c) 2006 WILEY-VCH Veriag GmbH & Co. KGaA, Weinheim.

引用

页码：614 / +

页数：3