Thermal conductance of thin silicon nanowires

被引：315

作者：

Chen, Renkun ^{[1
]}

Hochbaum, Allon I. ^{[2
]}

Murphy, Padraig ^{[3
]}

Moore, Joel ^{[3
,5
]}

Yang, Peidong ^{[2
,4
,5
]}

Majumdar, Arun ^{[1
,4
,5
]}

机构：

[1] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[4] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[5] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.101.105501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The thermal conductance of individual single crystalline silicon nanowires with diameters less than 30 nm has been measured from 20 to 100 K. The observed thermal conductance shows unusual linear temperature dependence at low temperatures, as opposed to the T-3 dependence predicted by the conventional phonon transport model. In contrast to previous models, the present study suggests that phonon-boundary scattering is highly frequency dependent, and ranges from nearly ballistic to completely diffusive, which can explain the unexpected linear temperature dependence.

引用

页数：4

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