Extended ATHENA™ alignment performance and application for the 100 nm technology node

被引：21

作者：

Navarro, R ^{[1
]}

Keij, S ^{[1
]}

den Boef, A ^{[1
]}

Schets, S ^{[1
]}

van Bilsen, F ^{[1
]}

Simons, G ^{[1
]}

Schuurhuis, R ^{[1
]}

Burghoorn, J ^{[1
]}

机构：

[1] ASML, NL-5503 LA Veldhoven, Netherlands

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XV | 2001年 / 4344卷

关键词：

overlay; alignment systems; wafer alignment strategies; RF phase modulation; Cu-damascene; W-CMP; STI;

D O I：

10.1117/12.436795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Applying current and forthcoming optical lithography Step & Scan systems for IC manufacturing with 100 nm device resolution requires constant reduction of the relevant product overlay contributors. The system's wafer alignment sensor plays a key role in determining the attainable product overlay. In this paper, it is shown that modulating the phase of the coherent illumination sources of a phase-grating alignment system improves measurement repeatability. This reduces the single-machine overlay contribution. In addition, by using extended functionality and new procedures to elucidate the optimal wafer alignment strategy, it is shown that the alignment system can resist advanced IC processing effects on alignment marks. This means that a further reduction of the process-induced overlay contribution can be accomplished.

引用

页码：682 / 694

页数：13