Negative transverse magnetoresistance of boron-doped graphite at liquid-nitrogen temperature in relation to 3D weak localization

被引:4
作者
Hishiyama, Y [1 ]
Matustani, T
Suzuki, M
Kaburagi, Y
Sugihara, K
机构
[1] Musashi Inst Technol, Fac Engn, Stagaya Ku, Tokyo 1588557, Japan
[2] Nihon Univ, Coll Pharm, Funabashi, Chiba 2748555, Japan
关键词
Negative transverse magnetoresistance;
D O I
10.1557/JMR.2002.0013
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The negative transverse magnetoresistance of boron-doped graphite at liquid-nitrogen temperature has been studied in detail using 3000 degreesC-treated Grafoil (commercially available graphite foil), with the measurements of interlayer spacing do,, at room temperature, the Hall coefficient and electrical resistivity at liquid-nitrogen temperature, and temperature dependence of the resistivity in a temperature range 1.7-273 K. The negative transverse magnetoresistance can be measured for the specimens with hole carriers having the Fermi energy lower than -0.07 eV, estimated by the Slonezewski-Weiss-McCure (SWMcC) band model using the Hall coefficient data. Characteristic feature of the negative transverse magnetoresistance has been investigated in terms of the SWMcC band model and a weak localization theory obtained by extending Kawabata's theory.
引用
收藏
页码:75 / 82
页数:8
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