Fluoropolymer indium-tin-oxide buffer layers for improved power conversion in organic photovoltaics

被引：46

作者：

Kang, Bonan ^{[1
,2
]}

Tan, L. W. ^{[1
]}

Silva, S. R. P. ^{[1
]}

机构：

[1] Univ Surrey, Adv Technol Inst, Nanoelect Ctr, Surrey GU2 7XH, England

[2] Jilin Univ Reg, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 13期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2983742

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the effects of polytetrafluoroethylene (PTFE) on poly (3-hexylthiophene): phenyl-C61- butyric acid methyl ester (P3HT:PCBM) based organic photovoltaic (OPV) devices by inserting thermally evaporated PTFE films between indium-tin-oxide (ITO) and P3HT: PCBM layers. Significant improvement in terms of open-circuit voltage, short-circuit current, and thereby in its commensurate power conversion efficiency is achieved compared to devices with poly (3,4-ethylenedioxythiophene): poly (styrene-sulfonate) layers. The OPVs performance enhancement is attributed to the formation of an artificial dipole layer resulting from the rich, negatively charged fluorine that facilitates the hole extraction process. This result shows the high potential of PTFE as a low cost and stable ITO buffer layer for OPV devices. (C) 2008 American Institute of Physics.

引用

页数：3

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