Molecularly adsorbed oxygen species on Si(111)-(7x7): STM-induced dissociative attachment studies

被引:149
作者
Martel, R [1 ]
Avouris, P [1 ]
Lyo, IW [1 ]
机构
[1] IBM CORP, DIV RES, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
关键词
D O I
10.1126/science.272.5260.385
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Scanning tunneling microscope (STM)-induced selective bond breaking in individual molecules and conventional STM imaging are combined to determine the nature of chemisorbed O-2 species formed during the initial stages of silicon (111)-(7x7) oxidation. A selective atomic-scale modification mechanism that involves dissociative electron attachment of tip-emitted electrons to empty adsorbate orbitals is introduced. Two molecular species were found: one involves O-2 bonded to an already oxidized silicon adatom, and the other involves an O-2 molecule that is bonded to a second-layer rest atom and interacting with two silicon adatoms.
引用
收藏
页码:385 / 388
页数:4
相关论文
共 39 条
[1]   ATOM-RESOLVED SURFACE-CHEMISTRY - THE EARLY STEPS OF SI(111)-7X7 OXIDATION [J].
AVOURIS, P ;
LYO, IW ;
BOZSO, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :424-430
[2]   ATOM-RESOLVED SURFACE-CHEMISTRY USING THE SCANNING TUNNELING MICROSCOPE [J].
AVOURIS, P .
JOURNAL OF PHYSICAL CHEMISTRY, 1990, 94 (06) :2246-2256
[3]   STM STUDIES OF SI(100)-2 X-1 OXIDATION - DEFECT CHEMISTRY AND SI EJECTION [J].
AVOURIS, P ;
CAHILL, DG .
ULTRAMICROSCOPY, 1992, 42 :838-844
[4]   MANIPULATION OF MATTER AT THE ATOMIC AND MOLECULAR-LEVELS [J].
AVOURIS, P .
ACCOUNTS OF CHEMICAL RESEARCH, 1995, 28 (03) :95-102
[5]  
AVOURIS P, 1989, PHYS REV B, V39, P5071
[6]  
AVOURIS P, 1992, AIP C P, V241
[7]   CHEMISORPTION OF ATOMIC OXYGEN ON SI(100) - SELF-CONSISTENT CLUSTER AND SLAB MODEL INVESTIGATIONS [J].
BATRA, IP ;
BAGUS, PS ;
HERMANN, K .
PHYSICAL REVIEW LETTERS, 1984, 52 (05) :384-387
[8]   ATOMIC SCALE CONVERSION OF CLEAN SI(111)-H-1X1 TO SI(111)-2X1 BY ELECTRON-STIMULATED DESORPTION [J].
BECKER, RS ;
HIGASHI, GS ;
CHABAL, YJ ;
BECKER, AJ .
PHYSICAL REVIEW LETTERS, 1990, 65 (15) :1917-1920
[9]   SCANNING-TUNNELING-MICROSCOPY OF THE INTERACTION OF HYDROGEN WITH SILICON SURFACES [J].
BOLAND, JJ .
ADVANCES IN PHYSICS, 1993, 42 (02) :129-171
[10]   THERMAL AND PHOTOCHEMICAL OXIDATION OF SI(111) - DOPING EFFECT AND THE REACTION-MECHANISM [J].
BOZSO, F ;
AVOURIS, P .
PHYSICAL REVIEW B, 1991, 44 (16) :9129-9132