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Formation processes and properties of Schottky and ohmic contacts on n-type GaN for field effect transistor applications

被引：44
作者：
Koyama, Y
Hashizume, T [1 ]
Hasegawa, H
机构：
[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan
来源：
SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 08期
关键词：
D O I：
10.1016/S0038-1101(99)00093-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In view of applications to FETs, an attempt was made to characterize and optimize vacuum deposition-based formation processes of Schottky and ohmic contacts on it-type GaN. Detailed I-V and XPS measurements were made, changing surface treatments and metal species. Pre-deposition surface treatments were found to be crucial to obtain good electrical characteristics. Au Schottky contacts formed on warm NH4OH treated surfaces showed nearly ideal thermionic-emission I-V characteristics with a highest Schottky barrier height of 1.03 eV. For ohmic contacts, Ti/Al contacts were investigated, using the circular transmission line model (TLM) method. Excellent ohmic characteristics with a minimum contact resistance of 5-8 x 10(-5) Omega cm(-2) were obtained by annealing at 600 degrees C for 1 min in N-2 atmosphere. Finally, narrow ring Au Schottky gates with Ti/Al ohmic electrodes were successfully fabricated, demonstrating applicability of the present contact formation processes for FET applications. (C) 1999 Elsevier Science Ltd. All rights reserved.
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页码：1483 / 1488
页数：6
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