Angle-resolved inverse photoemission of the (2 x 1)-reconstructed 3C-SiC(001) surface

被引：4

作者：

Benesch, C ^{[1
]}

Merz, H ^{[1
]}

Zacharias, H ^{[1
]}

机构：

[1] Univ Munster, Inst Phys, D-48149 Munster, Germany

来源：

SURFACE SCIENCE | 2001年 / 492卷 / 03期

关键词：

inverse photoemission spectroscopy; surface electronic phenomena (work function; surface potential; surface states; etc.); silicon carbide;

D O I：

10.1016/S0039-6028(01)01452-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the two-domain (2 x 1)-reconstructed 3C-SiC(001) surface using angle-resolved inverse photoemission. An unoccupied surface state band at E-SS = 2.0 eV with respect to the valence band maximum (VBM) at the <(<Gamma>)over bar> point is completely located within the bulk band gap. Further, an unoccupied surface resonance at E-SR = 3.6 eV above VBM is observed. Both surface structures show no dispersion in <(<Gamma>J)over bar> and <(<Gamma>J ' )over bar> directions, respectively. The energetic position of both is in good agreement with LDA surface band structure calculations. However, LDA calculations predict a dispersion of about 0.8-1.0 eV for the surface state band and about 0.5-0.8 eV for the surface resonance band, while experimentally no dispersion in <(<Gamma>J)over bar> and <(<Gamma>J ' )over bar> directions is observed. (C) 2001 Elsevier Science B.V. All rights reserved.

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页码：225 / 234

页数：10

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