Compositional change of MgO barrier and interface in CoFeB/MgO/CoFeB tunnel junction after annealing

被引：81

作者：

Bae, J. Y. ^{[1
]}

Lim, W. C.

Kim, H. J.

Lee, T. D.

Kim, K. W.

Kim, T. W.

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] Samsung Adv Inst Technol, Device Lab, Suwon, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 08期

关键词：

D O I：

10.1063/1.2170591

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recent experiments have demonstrated high tunneling magnetoresistance (TMR) ratios in magnetic tunnel junctions (MTJs) with the MgO barrier. The CoFeB/MgO/CoFeB junctions showed better properties than the CoFe/MgO/CoFe junctions because the MgO layer had a good crystalline structure with (001) texture and smooth and sharp interface between CoFeB/MgO. In this work, the compositional changes in the MgO barrier and at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization were studied in annealed MTJs. X-ray photoelectron spectroscopy depth profiles were utilized for the as-deposited and 340 degrees C annealed specimens. Transmission electron microscope analyses showed that the MgO barrier had (100) texture on CoFeB in the junctions and CoFeB was crystallized in the annealed junctions. B in the bottom CoFeB layer diffused into the MgO barrier and B-oxide was formed at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization. The B behavior will be discussed. (C) 2006 American Institute of Physics.

引用

页数：3

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