Oligofuran-containing molecules for organic electronics

被引：80

作者：

Gidron, Ori ^{[1
]}

Dadvand, Afshin ^{[2
,3
]}

Sun, Emily Wei-Hsin ^{[2
,3
]}

Chung, Insik ^{[2
,3
]}

Shimon, Linda J. W. ^{[4
]}

Bendikov, Michael ^{[1
]}

Perepichka, Dmitrii F. ^{[2
,3
]}

机构：

[1] Weizmann Inst Sci, Dept Organ Chem, IL-76100 Rehovot, Israel

[2] McGill Univ, Dept Chem, Montreal, PQ, Canada

[3] McGill Univ, CSACS, Montreal, PQ, Canada

[4] Weizmann Inst Sci, Dept Chem Res Support, IL-76100 Rehovot, Israel

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2013年 / 1卷 / 28期

基金：

加拿大自然科学与工程研究理事会;

关键词：

FIELD-EFFECT TRANSISTORS; ALPHA-OLIGOFURANS; HIGH-PERFORMANCE; CONJUGATED OLIGOMERS; RENEWABLE RESOURCES; OPTICAL-PROPERTIES; HIGH-MOBILITY; OLIGOTHIOPHENES; SEMICONDUCTORS; POLYMERS;

D O I：

10.1039/c3tc00079f

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We describe the synthesis, characterization and field effect transistor (FET) properties of a series of furan-based conjugated oligomers such as unsubstituted, hexyl- and styryl-capped linear oligofurans and oligofuran-substituted anthracene derivatives. All studied oligofurans show high fluorescence and good thermal stability. Top contact organic FETs (OFETs) fabricated with oligofurans as the active layer show hole mobilities (similar to 0.01 to 0.07 cm(2) V-1 s(-1)) and on/off ratios (10(4) to 10(6)) on a par with the corresponding oligothiophene analogues, while the threshold voltages displayed by oligofuran-based OFETs are significantly reduced due to higher HOMO energies as compared to those of oligothiophenes. Electroluminescence observed in oligofuran-based OFETs in a bottom-contact geometry is limited by electron injection. Overall, we find that furan building blocks are excellent candidates for replacing thiophene in optoelectronic materials.

引用

页码：4358 / 4367

页数：10

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