Defect structure and electron field-emission properties of boron-doped diamond films

被引：33

作者：

Chen, YH ^{[1
]}

Hu, CT

Lin, IN

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Ctr Mat Sci, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 18期

关键词：

D O I：

10.1063/1.125173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The correlation between electron field-emission properties of diamond films prepared by the chemical vapor deposition (CVD) process and the defect structure induced by boron doping was examined. Secondary ion mass spectroscopic analysis indicates that the solubility limit of boron in diamond is (B3+)(2)=5x10(21) cm(-3), whereas the infrared absorption (IR) spectroscopic analysis reveals that the largest boron concentration that can be incorporated as substitutional dopants is only one tenth of the solubility limit, (B3+)(d)=5x10(20) cm(-3). Including boron species higher than this concentration induces large strain and atomic defects, which are inferred by the distorted Raman resonance peak, noisy IR spectra, and twinned microstructure for diamond. Presumably, the presence of atomic defects, which behave as electron traps, is the mechanism deteriorating the electron field-emission properties of CVD diamonds. (C) 1999 American Institute of Physics. [S0003-6951(99)04544-1].

引用

页码：2857 / 2859

页数：3

共 16 条

[1] Modification on the electron field emission properties of diamond films: The effect of bias voltage applied in situ [J].