共 8 条
[1]
ANSARI PH, 1993, MATER RES SOC S P, V310, P467
[3]
Influence of PbTiO3 buffer layers on microstructural properties of Pb(Zr,Ti)O-3 films deposited by sputtering
[J].
FERROELECTRIC THIN FILMS V,
1996, 433
:291-296
[4]
DOI H, 1994, JPN J APPL PHYS 1, V33, P5159, DOI 10.1143/JJAP.33.5159
[5]
DIELECTRIC-PROPERTIES OF MULTILAYERED FERROELECTRIC THIN-FILMS FABRICATED BY SOL-GEL METHOD
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1994, 33 (9B)
:5272-5276
[6]
CONTROL OF ORIENTATION OF PB(ZR, TI)O-3 THIN-FILMS USING PBTIO3 BUFFER LAYER
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1994, 33 (9B)
:5167-5171
[7]
Low-temperature processing of highly oriented Pb(ZrXTi1-X)O-3 thin film with multi-seeding layers
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1997, 36 (9B)
:5803-5807
[8]
Low-temperature processing of ferroelectric Pb(Zr0.53Ti0.47)O-3 thin film from molecular-designed alkoxide precursor solution
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1996, 35 (9B)
:4896-4899