NO2-induced optical absorbance changes in semiconductor polyaniline thin films

被引:29
作者
Elizalde-Torres, J
Hu, HL
García-Valenzuela, A
机构
[1] Univ Nacl Autonoma Mexico, Ctr Ciencias Aplicadas & Desarrollo Tecnol, Mexico City 04510, DF, Mexico
[2] Univ Autonoma Estado Morelos, Fac Ciencias Quim & Ingn, Cuernavaca, Morelos, Mexico
[3] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Temixco 62580, Morelos, Mexico
关键词
polyaniline thin films; nitrogen dioxide; optical absorbance; adsorption energies;
D O I
10.1016/j.snb.2003.10.019
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Chemically deposited semiconductor polyaniline (PANI) thin films have been exposed to detect nitrogen dioxide gas. Because of the high electron receptor behavior, NO2 molecules oxidize the conjugated polymer during the sensing process, leading to the modification of the electronic structure and consequently the change of the optical absorbance of PANI as a function of the toxic gas concentration. NO2-induced optical transmittance changes of the polymer films can be varied between 5 and 80% for a NO2 gas concentration of 3-50 ppm. By using a parametric method, the heat of adsorption (Q) as well as the activation energy of adsorption (EA) for NO2 molecules on PANI surface are obtained from the corresponding adsorption kinetic curves. It is found that Q is of the order of 0.50-0.58 eV, and EA of 0.28-0.50 eV, depending on the type of the PANI films and the NO2 gas concentration. We show that the same kinetic expression can also be obtained from a reaction-diffusion coupled problem reported in literature by assuming a couple of the relations between the thermodynamic variables and kinetic reaction rates of the two models. The desorption process of NO2 from PANI samples is kinetically irreversible in a dried air or N-2 during the experimental time, and slowly reversible if they have been kept in ambient air with a relative humidity greater than zero. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:218 / 226
页数:9
相关论文
共 17 条
[1]   An optical gas sensor based on polyaniline Langmuir-Blodgett films [J].
Agbor, NE ;
Cresswell, JP ;
Petty, MC ;
Monkman, AP .
SENSORS AND ACTUATORS B-CHEMICAL, 1997, 41 (1-3) :137-141
[2]   dc and ac optical nulling bridges for sensitive transmittance measurements [J].
Argueta-Díaz, V ;
Trejo-Valdez, M ;
García-Valenzuela, A .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2000, 71 (08) :2995-3003
[3]   INTERACTION OF PLANAR POLYMER SCHOTTKY-BARRIER DIODES WITH GASEOUS SUBSTANCES [J].
ASSADI, A ;
SPETZ, A ;
WILLANDER, M ;
SVENSSON, C ;
LUNDSTROM, I ;
INGANAS, O .
SENSORS AND ACTUATORS B-CHEMICAL, 1994, 20 (01) :71-77
[4]   Electrical characteristics of a polyaniline/silicon hybrid field-effect transistor gas sensor [J].
Barker, PS ;
Monkman, AP ;
Petty, MC ;
Pride, R .
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 1997, 144 (02) :111-116
[5]   Diffusion and binding of molecules to sites within homogeneous thin films [J].
Bartlett, PN ;
Gardner, JW .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1996, 354 (1704) :35-57
[6]   GAS SENSITIVITY OF POLYPYRROLE FILMS TO NO2 [J].
HANAWA, T ;
KUWABATA, S ;
YONEYAMA, H .
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 1988, 84 :1587-1592
[7]   Polyaniline-poly(2-acrylamido-2-methyl-1-propanosulfonic acid) composite thin films:: structure and properties [J].
Hechavarría, L ;
Hu, HL ;
Rincón, ME .
THIN SOLID FILMS, 2003, 441 (1-2) :56-62
[8]   Adsorption kinetics of optochemical NH3 gas sensing with semiconductor polyaniline films [J].
Hu, H ;
Trejo, M ;
Nicho, ME ;
Saniger, JM ;
García-Valenzuela, A .
SENSORS AND ACTUATORS B-CHEMICAL, 2002, 82 (01) :14-23
[9]  
HU H, UNPUB REV MEX FIS
[10]   Optical and electrical responses of polymeric electrochromic devices:: effect of polyacid incorporation in polyaniline film [J].
Hu, HL ;
Hechavarría, L ;
Campos, J .
SOLID STATE IONICS, 2003, 161 (1-2) :165-172