Phase Formation and Growth Mechanism of Ternary and Quaternary Cu(In,Ga)S2 Chalcopyrite Layers

被引：3

作者：

Garcia Villora, Encarnacion ^{[1
]}

Fiechter, Sebastian ^{[1
]}

Klenk, Reiner ^{[1
]}

Lux-Steiner, Martha Ch. ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2000年 / 39卷 / 01期

关键词：

Cu(In; Ga)S-2; chalcopyrites; thin film formation; thermochemical calculations;

D O I：

10.7567/JJAPS.39S1.171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin film solar cell absorbers of nominal composition CuIn1-xGaxS2 for(0 < x < 0.5) were prepared by sequential evaporation of the metals and by subsequent annealing in either a sulfur or a H2S atmosphere. The film formation was investigated experimentally and elucidated by thermochemical calculations.

引用

页码：171 / 172

页数：2