Increasing process margin in SiGe heterojunction bipolar technology by adding carbon

被引：20

作者：

Osten, HJ ^{[1
]}

Knoll, D ^{[1
]}

Heinemann, B ^{[1
]}

Schley, P ^{[1
]}

机构：

[1] Inst Semicond Phys, IHP, D-15230 Frankfurt, Oder, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 09期

关键词：

heterojunction bipolar transistor; high frequency devices; Si/SiGe : C heterojunction;

D O I：

10.1109/16.784193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The incorporation of low carbon concentration within the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by a variety of subsequent processing steps. Thus, it provides greater flexibility in process design and wider latitude in process margin. We demonstrate almost ideal base current characteristics and cutoff, maximum oscillation frequencies of more than 70 GHz, and delays per stage down to 15 ps for ring oscillators with integrated SiGe:C HBT's.

引用

页码：1910 / 1912

页数：3

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