A CMOS bandgap reference circuit with sub-1-V operation

被引:568
作者
Banba, H [1 ]
Shiga, H
Umezawa, A
Miyaba, T
Tanzawa, T
Atsumi, S
Sakui, K
机构
[1] Toshiba Corp, Microelect Engn Lab, Sakae Ku, Yokohama, Kanagawa 2478585, Japan
[2] Toshiba Microelect Corp, Sakae Ku, Yokohama, Kanagawa 2478585, Japan
关键词
bandgap reference; CMOS; low voltage;
D O I
10.1109/4.760378
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper proposes a CMOS bandgap reference (BGR) circuit, which can successfully operate with sub-1-V supply, Zn the conventional BGR circuit, the output voltage V-ref is the sum of the built-in voltage of the diode V-f and the thermal voltage V-T Of kT/q multiplied by a constant. Therefore, V-ref is about 1.25 V, which limits a low supply-voltage operation below 1 V, Conversely, in the proposed BGR circuit, V-ref has been converted From the sum of two currents; one is proportional to V-f and the other is proportional to V-T. An experimental BGR circuit, which is simply composed of a CMOS op-amp, diodes, and resistors, has been fabricated in a conventional 0.4-mu m flash memory process. Measured V-ref is 518 +/- 15 mV (3 sigma) for 23 samples on the same wafer at 27-125 degrees C.
引用
收藏
页码:670 / 674
页数:5
相关论文
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