Capacitive and Solution Resistance Effects on Voltammetric Responses of a Thin Redox Layer Attached to Disk Microelectrodes

被引：11

作者：

Amatore, Christian ^{[1
]}

Oleinick, Alexander ^{[1
,2
]}

Svir, Irina ^{[1
,2
]}

机构：

[1] UMR CNRS ENS UPMC 8640 PASTEUR, Dept Chim, Ecole Normale Super, F-75231 Paris 05, France

[2] Kharkov Natl Univ Radioelect, Math & Comp Modelling Lab, UA-61166 Kharkov, Ukraine

来源：

ANALYTICAL CHEMISTRY | 2008年 / 80卷 / 21期

关键词：

D O I：

10.1021/ac8012972

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A rigorous theoretical analysis of cyclic voltammetry of surface-attached redox layers at disk microelectrodes is presented when effects enforced by the solution resistance and the electrode capacitance cannot be neglected. This allows a precise quantitative evaluation of the influence of each of the current components (faradaic, resistive, and capacitive) on the voltammetric shapes through numerical simulation. It is shown that the consideration of the solution resistance and capacitance effects is crucial for the correct treatment of experimental voltammograms at high-voltage scan rates when the resistance is not compensated.

引用

页码：7957 / 7963

页数：7

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