Crystalline and nearly stoichiometric vanadium nitride thin film by PLD

被引:26
作者
Dai, ZN
Miyashita, A
Yamamoto, S
Narumi, K
Naramoto, H
机构
[1] JAERI Takasaki, Adv Sci Res Ctr, Gunma 3701292, Japan
[2] JAERI Takasaki, Dept Mat Dev, Adv Sci Res Ctr, Gunma 3701292, Japan
关键词
deposition process; laser ablation; nitrides;
D O I
10.1016/S0040-6090(98)01726-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pulsed laser deposition (PLD) with a YAG:Nd laser was used to prepare vanadium nitride thin film. Different deposition conditions of different temperatures, substrates and gas pressure were explored. The films were characterized with XRD (X-ray diffractometer), XRD pole figure, AES (Auger electron spectrometry) and RBS (Rutherford backscattering spectrometry) /Channeling. It was found that crystalline and nearly stoichiometric VNx films with an x value of 0.96 on c plane alpha-Al2O3 had been prepared by YAG:Nd laser at 450 degrees C with the mixed gas of nitrogen and 3% hydrogen of 200 Pa, X-ray diffractometer, XRD pole figure, AES and RBS/Channeling surely confirm epitaxial and near stoichiometric growth. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:117 / 120
页数:4
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