Damage nucleation and vacancy-induced structural transformation in Si grain boundaries

被引：10

作者：

Maiti, A

Pantelides, ST

Chisholm, MF

Pennycook, SJ

机构：

[1] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA

[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 16期

关键词：

D O I：

10.1063/1.125021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic resolution Z-contrast scanning transmission electron microscopy reveals preferential nucleation of electron-beam-induced damage in select atomic columns of a Si tilt grain boundary. Atomic scale simulations find that the region of initial damage nucleation corresponds to columns where the formation energies of vacancies and vacancy complexes are very low. The calculations further predict that vacancy accumulation in certain pairs of columns can induce a structural transformation to low-density dislocation "pipes" with all atoms fourfold coordinated. (C) 1999 American Institute of Physics. [S0003-6951(99)00742-1].

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页码：2380 / 2382

页数：3

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