Tunnel-magnetoresistance system with an amorphous detection layer

被引：26

作者：

Käufler, A

Luo, Y

Samwer, K

Gieres, G

Vieth, M

Wecker, J

机构：

[1] Univ Gottingen, Inst Phys 1, D-37073 Gottingen, Germany

[2] Siemens AG, ZT MF1, D-91052 Erlangen, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 03期

关键词：

D O I：

10.1063/1.1426236

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied magnetic tunnel junctions using an amorphous CoFeNiSiB soft magnetic layer. At room temperature a tunnel-magnetoresistance ratio of 12% was achieved with a switching field of the amorphous layer of 12 Oe. The effect could be enhanced up to 22% by annealing. Investigations on single amorphous layers show a thermal stability up to 350 degreesC annealing temperature even for very thin layers. Due to the special preparation technique, an in-plane anisotropy is induced resulting from an oblique-incidence effect which presumably affects the short-range order of the amorphous phase. (C) 2002 American Institute of Physics.

引用

收藏

页码：1701 / 1703

页数：3

相关论文

共 17 条

[1] Manganite-based magnetic tunnel junctions:: new ideas on spin-polarised tunnelling [J].

de Teresa, JM ;

Barthélémy, A ;

Contour, JP ;

Fert, A .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2000, 211 (1-3) :160-166

[2] Correlation of magnetic and microstructural properties of obliquely deposited Co/Cr thin films [J].

Jackson, M ;

Mendus, T ;

Short, GR ;

Thompson, SM ;

Whiting, JSS ;

Ho, EM ;

Petford-Long, A .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2000, 213 (1-2) :234-244

[3] TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].

JULLIERE, M .

PHYSICS LETTERS A, 1975, 54 (03) :225-226

[4]

KAUFLER A, UNPUB

[5] SPIN-RESOLVED AND HIGH-ENERGY-RESOLUTION XPS STUDIES OF COBALT METAL AND A COBALT MAGNETIC GLASS [J].

KLEBANOFF, LE ;

VANCAMPEN, DG ;

POULIOT, RJ .

PHYSICAL REVIEW B, 1994, 49 (03) :2047-2057

[6]

LUBORSKY FE, 1983, AMORPHOUS METALLIC A

[7] Ferromagnetic-insulator-ferromagnetic tunneling: Spin-dependent tunneling and large magnetoresistance in trilayer junctions [J].

Moodera, JS ;

Kinder, LR .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) :4724-4729

[8] LARGE MAGNETORESISTANCE AT ROOM-TEMPERATURE IN FERROMAGNETIC THIN-FILM TUNNEL-JUNCTIONS [J].

MOODERA, JS ;

KINDER, LR ;

WONG, TM ;

MESERVEY, R .

PHYSICAL REVIEW LETTERS, 1995, 74 (16) :3273-3276

[9]

NEEL L, 1962, CR HEBD ACAD SCI, V255, P1676

[10] Spin-polarized density of states and electron tunnelling from the Co/Al2O3 interface [J].

Nguyen-Manh, D ;

Tsymbal, EY ;

Pettifor, DG ;

Arcangeli, C ;

Tank, R ;

Andersen, OK ;

Pasturel, A .

MICROSCOPIC SIMULATION OF INTERFACIAL PHENOMENA IN SOLIDS AND LIQUIDS, 1998, 492 :319-324