Intensity-tunable group delay using stimulated Raman scattering in silicon slow-light waveguides

被引：21

作者：

Blair, S ^{[1
]}

Zheng, K ^{[1
]}

机构：

[1] Univ Utah, Dept Elect & Comp Engn, Salt Lake City, UT 84112 USA

来源：

OPTICS EXPRESS | 2006年 / 14卷 / 03期

关键词：

D O I：

10.1364/OE.14.001064

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We show that stimulated Raman scattering is a sufficiently strong effect in silicon waveguides to allow the intensity of a pump input to control the group delay of a weak Stokes-shifted signal. While the fractional change in group delay is minimal in a straight waveguide, microresonator enhancement can produce a fractional increase of 50% with respect to the linear group delay of the resonator. (c) 2006 Optical Society of America.

引用

页码：1064 / 1069

页数：6

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