Low-Temperature Synthesis of Large-Scale Molybdenum Disulfide Thin Films Directly on a Plastic Substrate Using Plasma-Enhanced Chemical Vapor Deposition

被引：229

作者：

Ahn, Chisung ^{[1
]}

Lee, Jinhwan ^{[2
]}

Kim, Hyeong-U ^{[1
]}

Bark, Hunyoung ^{[1
]}

Jeon, Minhwan ^{[1
]}

Ryu, Gyeong Hee ^{[3
]}

Lee, Zonghoon ^{[3
]}

Yeom, Geun Young ^{[1
,4
]}

Kim, Kwangsu ^{[5
]}

Jung, Jaehyuck ^{[1
]}

Kim, Youngseok ^{[2
]}

Lee, Changgu ^{[1
,2
]}

Kim, Taesung ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, Gyeonggi Do, South Korea

[2] Sungkyunkwan Univ, Sch Mech Engn, Suwon 440746, Gyeonggi Do, South Korea

[3] Ulsan Natl Inst Sci & Technol UNIST, Sch Mat Sci & Engn, Ulsan 689798, South Korea

[4] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi Do, South Korea

[5] Samsung Elect, Semicond R&D Ctr, Hwaseong 445701, Gyeonggi Do, South Korea

来源：

ADVANCED MATERIALS | 2015年 / 27卷 / 35期

基金：

新加坡国家研究基金会;

关键词：

flexible sensor; low temperature; molybdenum disulfide (MoS2); plasma-enhanced chemical vapor deposition (PECVD); plastic substrate; MOS2 ATOMIC LAYERS; LARGE-AREA; MONOLAYER; GRAPHENE; GROWTH; SULFUR; SIO2;

D O I：

10.1002/adma.201501678

中图分类号：

O6 [化学];

学科分类号：

070301 [无机化学];

摘要：

By plasma-enhanced chemical vapor deposition, a molybdenum disulfide (MoS2) thin film is synthesized directly on a wafer-scale plastic substrate at below 300-C. The carrier mobility of the films is 3.74 cm2 V-1 s-1. Also, humidity is successfully detected with MoS2-based sensors fabricated on the flexible substrate, which reveals its potential for flexible sensing devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：5223 / 5229

页数：7

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