Low-Temperature Growth and Characterization of Single Crystalline ZnO Nanorod Arrays Using a Catalyst-Free Inductively Coupled Plasma-Metal Organic Chemical Vapor Deposition

被引:2
作者
Jeong, Sang-Hun [1 ]
Lee, Chang-Bae [2 ]
Moon, Won-Jin [1 ]
Song, Ho-Jun [3 ,4 ]
机构
[1] Korea Basic Sci Inst, Gwangju Ctr, Kwangju 500757, South Korea
[2] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea
[3] Chonnam Natl Univ, Sch Dent, Dept Dent Mat, Kwangju 500757, South Korea
[4] Chonnam Natl Univ, Sch Dent, Dent Mat Res Inst, Kwangju 500757, South Korea
关键词
ICP-MOCVD; ZnO Nanorod-Arrays; Single Crystal; Blue Shift of Exciton Emission;
D O I
10.1166/jnn.2008.1049
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Vertically aligned ZnO nanorod arrays have been synthesized on c-plane sapphires at a low temperature of 400 degrees C using catalyst-free inductively coupled plasma (ICP) metal organic chemical vapor deposition (MOCVD) technique by varying the ICP powers. Diameters of the ZnO nanorods changed from 200 nm to 400 nm as the ICP power increased from 200 to 400 Waft. TEM and XRD investigations indicated that the ZnO nanorod arrays grown at ICP powers above 200 Waft had a homogeneous in-plane alignment and single crystalline nature. PL study at room temperature (RT) and 6 K confirmed that the ZnO nanorod arrays in the present study are of high optical quality as well as good crystalline quality, showing only exciton-related emission peaks without any trace of defect-related deep level emissions in visible range. The blueshift of exciton emission peak in RTPL spectra was also found as rod diameter decreased and it is deduced that this shift in emission energy may be due to the surface resonance effect resulted from the increased surface-to-volume ratio, based on the observation and behavior of the surface exciton (SX) emission in the high-resolution 6 K PL spectra.
引用
收藏
页码:5098 / 5103
页数:6
相关论文
共 21 条
  • [1] Nanotechnology: Wired for success
    Appell, D
    [J]. NATURE, 2002, 419 (6907) : 553 - 555
  • [2] Anomalous blueshift in emission spectra of ZnO nanorods with sizes beyond quantum confinement regime
    Chen, Chun-Wei
    Chen, Kuei-Hsien
    Shen, Ching-Hsing
    Ganguly, Abhijit
    Chen, Li-Chyong
    Wu, Jih-Jen
    Wen, Hui-I
    Pong, Way-Faung
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (24)
  • [3] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
    Duan, XF
    Huang, Y
    Cui, Y
    Wang, JF
    Lieber, CM
    [J]. NATURE, 2001, 409 (6816) : 66 - 69
  • [4] Interface and confined optical phonons in wurtzite nanocrystals
    Fonoberov, VA
    Balandin, AA
    [J]. PHYSICAL REVIEW B, 2004, 70 (23) : 1 - 4
  • [5] Uniaxial locked epitaxy of ZnO on the a face of sapphire
    Fons, P
    Iwata, K
    Yamada, A
    Matsubara, K
    Niki, S
    Nakahara, K
    Tanabe, T
    Takasu, H
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (12) : 1801 - 1803
  • [6] Surface excitonic emission and quenching effects in ZnO nanowire/nanowall systems:: Limiting effects on device potential -: art. no. 115439
    Grabowska, J
    Meaney, A
    Nanda, KK
    Mosnier, JP
    Henry, MO
    Duclère, JR
    McGlynn, E
    [J]. PHYSICAL REVIEW B, 2005, 71 (11)
  • [7] Han BS, 2007, J NANOSCI NANOTECHNO, V7, P4158, DOI 10.1166/jnn.2007.014
  • [8] Huang MH, 2001, ADV MATER, V13, P113, DOI 10.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO
  • [9] 2-H
  • [10] Homo-buffer layer effects and single crystalline ZnO hetero-epitaxy on c-plane sapphire by a conventional RF magnetron sputtering
    Jeong, SH
    Kim, IS
    Kim, SS
    Kim, JK
    Lee, BT
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 264 (1-3) : 110 - 115