Chloride Inclusion and Hole Transport Material Doping to Improve Methyl Ammonium Lead Bromide Perovskite-Based High Open-Circuit Voltage Solar Cells

被引：346

作者：

Edri, Eran ^{[1
]}

Kirmayer, Saar ^{[1
]}

Kulbak, Michael ^{[1
]}

Hodes, Gary ^{[1
]}

Cahen, David ^{[1
]}

机构：

[1] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2014年 / 5卷 / 03期

关键词：

ORGANIC SEMICONDUCTORS; LENGTHS;

D O I：

10.1021/jz402706q

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Low-cost solar cells with high V-OC, relatively small (E-G - qV(OC)), and high qV(OC)/E-G ratio, where E-G is the absorber band gap, are long sought after, especially for use in tandem cells or other systems with spectral splitting. We report a significant improvement in CH3NH3PbBr3-based cells, using CH(3)NH(3)PbBr(3-)xCl(x), with E-G = 2.3 eV, as the absorber in a mesoporous p-i-n device configuration. By p-doping an organic hole transport material with a deep HOMO level and wide band gap to reduce recombination, the cell's V-OC increased to 1.5 V, a 0.2 V increase from our earlier results with the pristine Br analogue with an identical band gap. At the same time, in the most efficient devices, the current density increased from similar to 1 to 4 mA/cm(2).

引用

页码：429 / 433

页数：5

共 19 条

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