Dielectric barriers for flexible CIGS solar modules

被引:66
作者
Herz, K
Kessler, E
Wächter, R
Powalla, M
Schneider, J
Schulz, A
Schumacher, U
机构
[1] Zentrum Sonnenenergie & Wasserstoff Forsch, D-70565 Stuttgart, Germany
[2] Univ Stuttgart, Inst Plasmaforsch, D-70569 Stuttgart, Germany
关键词
flexible solar modules; Cu(In; Ga)Se; (GIGS); dielectric barrier; electric insulation; barrier resistance; breakdown voltage;
D O I
10.1016/S0040-6090(01)01516-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cu(In,Ga)Se-2 (CIGS)-based thin-film solar modules are commonly deposited on float glass substrates at temperatures of approximately 550degreesC. For the preparation of flexible and monolithically integrated solar modules on metal foils. the substrates first have to be coated by an electrically insulating barrier. In this study. dielectric barrier layers of Al2O3 and SiOx were deposited on metal foils of Ti. Kovar(R) and ferritic Cr steel. The insulation properties were tested by sputtering small Mo contacts onto the barriers and measuring the resistance and breakdown voltages of the layers before and after CIGS deposition. Best insulating barriers could be achieved with 6-mum-thick combi layers of SiOx (plasma CVD)/SiOx (sol-gel) and SiOx (plasma CVD)/ Al2O3 (sputtered). These layers additionally act as diffusion barriers. Results of solar cell and module characterisation are presented to demonstrate the progress in barrier development. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:384 / 389
页数:6
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