CVD of nanosized ZnS and CdS thin films from single-source precursors

被引：40

作者：

Barreca, D ^{[1
]}

Gasparotto, A

Maragno, C

Tondello, E

机构：

[1] CNR, Ist Sci & Tecnol Mol, Sez Padova, I-35131 Padua, Italy

[2] Univ Padua, Dipartimento Chim, I-35131 Padua, Italy

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2004年 / 151卷 / 06期

关键词：

D O I：

10.1149/1.1739221

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A chemical vapor deposition (CVD) route to nanosized ZnS and CdS thin films was developed. The layers were deposited on SiO2 substrates in a N-2 atmosphere at temperatures between 473 and 723 K using M(O-(i)PrXan)(2) [M = Zn,Cd; O-(i)PrXan = S2COCH(CH3)(2)] as single-source precursors. Thermal decomposition and fragmentation of M(O-(i)PrXan)(2) compounds were investigated by thermal analyses and mass spectrometry. The sulfide films were thoroughly characterized in their composition, nanostructure, and morphology by means of several analytical techniques. Surface and in-depth chemical composition was studied by X-ray photoelectron spectroscopy, X-ray excited Auger electron spectroscopy, and secondary ion mass spectrometry. Film nanostructure and surface topography were investigated as a function of the synthesis conditions by glancing incidence X-ray diffraction and atomic force microscopy, respectively. Optical absorption properties were also studied. Nanophasic and contaminant-free ZnS and CdS thin films with an average crystallite size lower than 25 nm were obtained. The layers mainly contained the hexagonal (alpha) sulfide phase and displayed a smooth and regular surface morphology. In the present work, the influence of synthesis conditions on film characteristics is analyzed and discussed. (C) 2004 The Electrochemical Society.

引用

页码：G428 / G435

页数：8

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