Energy straggling and multiple scattering in silicon strip detectors

被引：4

作者：

Anticic, T

Battiston, R

Braunschweig, W

Chang, YH

Chien, CY

Chen, AE

Hou, SR

Lin, CH

Lin, WT

Ostonen, R

Spartiotis, K

Syben, O

Toker, O

Wittmer, B

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS 1,D-52056 AACHEN,GERMANY

[2] JOHNS HOPKINS UNIV,DEPT PHYS & ASTRON,BALTIMORE,MD 21218

[3] NATL CENT UNIV,DEPT PHYS,CHUNGLI 32054,TAIWAN

[4] IST NAZL FIS NUCL,I-06100 PERUGIA,ITALY

[5] UNIV PERUGIA,I-06100 PERUGIA,ITALY

[6] RES INST HIGH ENERGY PHYS,SEFT,SF-00014 HELSINKI,FINLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 374卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0168-9002(96)00272-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We present a test beam study of energy straggling and multiple scattering in silicon strip detectors using electrons and pions of momenta up to 50 GeV. Results are compared with GEANT simulation using a simple algorithm to parameterize energy loss distribution. The deflection due to multiple scattering in crystalline structure was investigated by placing a GaAs wafer at various angles.

引用

页码：309 / 314

页数：6

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