Enhanced electron injection into light-emitting diodes via interfacial tunneling

被引：32

作者：

Wolf, U

Bassler, H

机构：

[1] Univ Marburg, Inst Phys Chem Makromol Chem & Kernchem, D-35032 Marburg, Germany

[2] Univ Marburg, Zentrum Mat Wissensch, D-35032 Marburg, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 25期

关键词：

D O I：

10.1063/1.124200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A previous Monte Carlo simulation for hopping injection into a random organic dielectric has been extended to include the effect of tunneling through a thin inorganic insulator. The effect of the interface has been explained upon the fact that the attenuation length of an electron is much larger in a strongly bonded inorganic solid as compared to a van-der-Waals bonded organic. Depending upon the system parameters, significant improvement of injection is predicted. (C) 1999 American Institute of Physics. [S0003-6951(99)02125-7].

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页码：3848 / 3850

页数：3

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