Normal-incidence Ge quantum-dot photodetectors at 1.5 μm based on Si substrate

被引：84

作者：

Tong, S ^{[1
]}

Liu, JL ^{[1
]}

Wan, J ^{[1
]}

Wang, KL ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 07期

关键词：

D O I：

10.1063/1.1449525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Coherent Ge quantum dots embedded in Si spacing layers were grown on Si substrate by molecular-beam epitaxy in the Stranski-Krastanov mode. Photoluminescence measurement showed a Ge-dot-related peak at 1.46 mum. p-i-n photodiodes with the intrinsic layer containing Ge dots were fabricated, and current-voltage (I-V) measurement showed a low dark current density of 3x10(-5) A/cm(2) at -1 V. A strong photoresponse at 1.3-1.52 mum originating from Ge dots was observed, and at normal incidence, an external quantum efficiency of 8% was achieved at -2.5 V. (C) 2002 American Institute of Physics.

引用

页码：1189 / 1191

页数：3

共 18 条

[1] PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF SIGE DOTS FABRICATED ISLAND GROWTH [J].

APETZ, R ;

VESCAN, L ;

HARTMANN, A ;

DIEKER, C ;

LUTH, H .

APPLIED PHYSICS LETTERS, 1995, 66 (04) :445-447

[2] SiGe intermixing in Ge/Si(100) islands [J].

Capellini, G ;

De Seta, M ;

Evangelisti, F .

APPLIED PHYSICS LETTERS, 2001, 78 (03) :303-305

[3] Efficient silicon light-emitting diodes [J].

Green, MA ;

Zhao, JH ;

Wang, AH ;

Reece, PJ ;

Gal, M .

NATURE, 2001, 412 (6849) :805-808

[4] NORMAL-INCIDENCE STRAINED-LAYER SUPERLATTICE GE0.5SI0.5/SI PHOTODIODES NEAR 1.3 MU-M [J].

HUANG, FY ;

ZHU, X ;

TANNER, MO ;

WANG, KL .

APPLIED PHYSICS LETTERS, 1995, 67 (04) :566-568

[5] HYBRID SI MOLECULAR-BEAM EPITAXIAL REGROWTH FOR A STRAINED SI1-XGEX/SI SINGLE-QUANTUM-WELL ELECTROLUMINESCENT DEVICE [J].

KATO, Y ;

FUKATSU, S ;

USAMI, N ;

SHIRAKI, Y .

APPLIED PHYSICS LETTERS, 1993, 63 (17) :2414-2416

[6] Field-driven blue shift of excitonic photoluminescence in Si-Ge quantum wells and superlattices [J].

Kim, JY ;

Fukatsu, S ;

Usami, N ;

Shiraki, Y .

JOURNAL OF CRYSTAL GROWTH, 1995, 157 (1-4) :40-44

[7] Si1-xGex/Si resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3 μm [J].

Li, C ;

Yang, QQ ;

Wang, HJ ;

Zhu, J ;

Luo, LP ;

Yu, JZ ;

Wang, QM ;

Li, YK ;

Zhou, JM ;

Lin, CL .

APPLIED PHYSICS LETTERS, 2000, 77 (02) :157-159

[8] A surfactant-mediated relaxed Si0.5Ge0.5 graded layer with a very low threading dislocation density and smooth surface [J].

Liu, JL ;

Moore, CD ;

U'Ren, GD ;

Luo, YH ;

Lu, Y ;

Jin, G ;

Thomas, SG ;

Goorsky, MS ;

Wang, KL .

APPLIED PHYSICS LETTERS, 1999, 75 (11) :1586-1588

[9] Intersubband absorption in boron-doped multiple Ge quantum dots [J].

Liu, JL ;

Wu, WG ;

Balandin, A ;

Jin, GL ;

Wang, KL .

APPLIED PHYSICS LETTERS, 1999, 74 (02) :185-187

[10] Optimization of Si1-xGex/Si waveguide photodetectors operating at lambda=1.3 mu m [J].

Naval, L ;

Jalali, B ;

Gomelsky, L ;

Liu, JM .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1996, 14 (05) :787-797

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