Electronic structures and optical properties of wurtzite type LiBSe2 (B = Al, Ga, In):: A first-principles study

被引：38

作者：

Li, Long-Hua ^{[1
,2
]}

Li, Jun-Qian ^{[3
]}

Wu, Li-Ming ^{[1
]}

机构：

[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

[3] Fuzhou Univ, Dept Chem, Fuzhou 350002, Fujian, Peoples R China

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2008年 / 181卷 / 09期

基金：

中国国家自然科学基金;

关键词：

DFT; wurtzite type selenides; electronic structure; band gap;

D O I：

10.1016/j.jssc.2008.05.047

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The electronic Structures of three wurtzite type isostructural compounds LiBSe2 (B = Al, Ga, In) are studied by the density functional theory (DFT). The results reveal that the presence of Li cations has direct influence on neither the band gaps (Eg) nor the bonding levels. but plays an important role in the stabilization of the structures. The band Structures and densities of states (DOS) are analyzed in detail, and the band gaps of LiBSe2 adhere to the following trend Eg((LiAlSe2)) > Eg((LiGaSe2)) > Eg((LiInSe2)), which is in agreement with the decrease of the bond energy of the corresponding Se 4p-B s antibonding orbitals. The role of the active s electrons of B element on the band gaps is also discussed. Finally, the optical properties are predicted, and the results would be a guide to understand the experiments. (C) 2008 Elsevier Inc. All rights reserved.

引用

页码：2462 / 2468

页数：7

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