Modeling of microwave active devices using the FDTD analysis based on the voltage-source approach

被引：58

作者：

Kuo, CN

Wu, RB

Houshmand, B

Itoh, T

机构：

[1] Electrical Engineering Department, University of California, Los Angeles

[2] Electrical Engineering Department, National Taiwan University, Taipei

[3] Jet Propulsion Laboratory, Pasadena

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1996年 / 6卷 / 05期

关键词：

D O I：

10.1109/75.491504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

This letter describes a voltage-source-based formulation of the extended finite-difference time-domain algorithm for the purpose of modeling microwave devices, The device-wave interaction is fully characterized by replacing the lumped devices with equivalent voltage sources in the device region, which in turn generate electromagnetic fields according to Faraday's law, This formulation is applied to the analysis of a typical microwave amplifier, which includes a three-terminal active MESFET device, Simulation results are in good agreement with measured data.

引用

页码：199 / 201

页数：3

共 11 条

[1]

DESOER CA, 1969, BASIC CIRCUIT THEORY, pCH12

[2]

ABSORBING BOUNDARY-CONDITIONS FOR DIFFERENCE APPROXIMATIONS TO THE MULTIDIMENSIONAL WAVE-EQUATION [J].