Properties of strained and unstrained III-nitrides

被引：5

作者：

Wagner, JM ^{[1
]}

Portisch, G ^{[1
]}

Karch, K ^{[1
]}

Bechstedt, F ^{[1
]}

机构：

[1] Univ Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 59卷 / 1-3期

关键词：

group-III nitrides; hydrostatic pressure; optical phonons; dielectric constant; effective charge;

D O I：

10.1016/S0921-5107(98)00346-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present results of first-principles calculations of structural, dielectric and lattice-dynamical properties of the group-III nitrides BN, AlN and GaN. We consider both polytypes, the zinc-blende and the wurtzite structure, under hydrostatic pressure. The calculations within density-functional theory and local-density approximation are based on soft pseudopotentials and plane waves. We determine the Born effective charges, the high-frequency dielectric constants and the zone-center phonons. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：248 / 252

页数：5

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