Interfacial reactions in a HfO2/TiN/poly-Si gate stack

被引：17

作者：

MacKenzie, M. ^{[1
]}

Craven, A. J.

McComb, D. W.

De Gendt, S.

机构：

[1] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[3] IMEC, B-3001 Heverlee, Belgium

[4] Katholieke Univ Leuven, Dept Chem, B-3001 Heverlee, Belgium

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2201891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interface reactions are investigated in a Si(100)/SiO2/HfO2/TiN/poly-Si gate stack using electron-energy-loss spectroscopy. The electron-energy-loss near-edge fine structure on the core edges shows evidence of interface reactions having occurred between the TiN metal gate and surrounding layers. A Si(O,N) phase is observed at the TiN/poly-Si interface. (c) 2006 American Institute of Physics.

引用

页数：3

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