STM study of Cu growth on the ZnO(1010) surface

被引:73
作者
Dulub, O
Boatner, LA
Diebold, U [1 ]
机构
[1] Tulane Univ, Dept Phys, New Orleans, LA 70118 USA
[2] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
基金
美国国家科学基金会;
关键词
scanning tunneling microscope; growth; adsorption kinetics; nucleation; zinc oxide; copper; surface defects; diffusion and migration;
D O I
10.1016/S0039-6028(02)01107-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The room temperature growth of Cu islands on the non-polar (10 10) surface of zinc oxide was studied using scanning tunneling microscopy, Images of the clean (10 10) surface prepared by sputtering and annealing at 550-700 degreesC exhibit flat terraces with a high density of steps, mostly running along [0 0 0 1] and [1 (2) over bar 1 0] directions, For Cu coverages of 0.025-1 ML deposited on flat. freshly annealed surfaces, preferential nucleation occurs at the step edges oriented perpendicular to the [1 2 10] atomic row direction. Exclusively three-dimensional (3D) islands have been observed at all coverages. For comparison. the same Cu coverages were deposited onto the surface contaminated by adsorption from the residual gas in the ultrahigh vacuum chamber. Both 2D and 3D islands, randomly distributed across the terraces, were observed reproducibly on such slightly contaminated surfaces. The density of the islands, as well as their average diameter and height, increases with increasing Cu coverage for both surface preparations, (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:271 / 281
页数:11
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