Direct evidence of phosphorus-defect complexes in n-type amorphous silicon and hydrogenated amorphous silicon

被引：23

作者：

Petkov, MP ^{[1
]}

Weber, MH

Lynn, KG

Crandall, RS

Ghosh, VJ

机构：

[1] Washington State Univ, Dept Phys, Pullman, WA 99164 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

[3] Brookhaven Natl Lab, Dept Appl Sci, Upton, NY 11973 USA

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.82.3819

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We use positron annihilation spectroscopy (PAS) to identify the phosphorus-defect complex (*D-) in n-type hydrogenated amorphous Si (a-Si:H). The positrons are attracted and localized at the small open volume associated with the dangling bond defects. The radiation detected after annihilation gives a characteristic P signature, regarded as a *D- "fingerprint." Additional evidence is obtained from a comparison to P-implanted amorphized Si, as well as from theoretical calculations. This work lays the foundation for PAS studies of impurity-defect related processes in a-Si:H.

引用

页码：3819 / 3822

页数：4

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