Epitaxial growth of PLZT thin film on SrTiO3 substrate by sputtering method

被引：2

作者：

Qiu, PS ^{[1
]}

Cheng, WX ^{[1
]}

He, XY ^{[1
]}

Zheng, XS ^{[1
]}

Ding, AL ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

INTEGRATED FERROELECTRICS | 2005年 / 75卷

关键词：

SrTiO3; substrate; PLZT thin film; sputtering condition; epitaxial growth;

D O I：

10.1080/10584580500414283

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

PLZT thin films were prepared on SrTiO 3 substrate by RF magnetron sputtering method. The electrical measurements were conducted on PLZT films in metal-ferroelectric-semiconductor capacitor configuration (MFS). The PLZT thin films annealed at 650 degrees C showed well-saturated hysteresis loops with remanent polarization and coercive electric field values were 0.3 mu C/cm 2 and 36 KV/cm respectively. The relationship between the orientation of thin film and thermal treating condition was discussed. The PLZT thin films with a thickness of 1.5 um were epitaxially grown on SrTiO 3 substrate successfully.

引用

页码：155 / 161

页数：7

共 5 条

[1] Growth and characterization of PLZT films [J].