Anomalous Hall effect in Gd-doped La2/3Ca1/3MnO3

被引：15

作者：

Jaime, M ^{[1
]}

Hardner, H ^{[1
]}

Salamon, MB ^{[1
]}

Rubinstein, M ^{[1
]}

Dorsey, P ^{[1
]}

Emin, D ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 08期

关键词：

MAGNETORESISTANCE;

D O I：

10.1063/1.365011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ceramic samples of composition (La1-xGdx)(2/3)Ca1/3MnO3 were prepared and used as targets to grow films onto LaAlO3 substrates by pulsed laser deposition. Comparison of the electrical resistance and thermopower, measured vs temperature and applied magnetic fields, indicates transport dominated by positively charged small polarons in the high temperature paramagnetic state. Nonetheless, the Hall effect, measured in 0.5 mu m thick films of composition x = 0 and x = 0.25, has the sign that is normally ascribed to negatively charged free carriers. The magnitude of the Hall coefficient decreases exponentially with increasing temperature with an activation energy that differs from that of the resistivity. This behavior and its anomalous negative sign are interpreted to result from face-diagonal hopping of small polarons in the Mn sublattice. (C) 1997 American Institute of Physics.

引用

页码：4958 / 4960

页数：3

共 12 条

[1] MAGNETORESISTANCE IN MAGNETIC MANGANESE OXIDE WITH INTRINSIC ANTIFERROMAGNETIC SPIN STRUCTURE [J].