Density functional study of the structural and electronic properties of RuS2(111) I.: Bare surfaces

被引:17
作者
Grillo, ME
Smelyanski, V
Sautet, P
Hafner, J
机构
[1] Intevep SA, PDVSA, Res & Technol Support Ctr, Caracas 1070A, Venezuela
[2] Vienna Univ Technol, Inst Theoret Phys, A-1040 Vienna, Austria
[3] Inst Rech Catalyse, F-69626 Villeurbanne, France
[4] Ecole Normale Super Lyon, Chim Theor Lab, F-69364 Lyon 07, France
基金
奥地利科学基金会;
关键词
ab initio quantum chemical methods and calculations; low index single crystal surfaces; ruthenium; semiconducting surfaces; sulphides; surface energy; surface relaxation and reconstruction;
D O I
10.1016/S0039-6028(99)00757-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Trends in the surface relaxation and electronic properties of RuS2(111) as a function of the sulfur concentration at the surface have been investigated by ab initio density functional calculations. Consistent with experimental and previous theoretical studies, sulfur-enriched terminations without exposed unsaturated metal atoms (anionic vacancies) turn out to be more stable compared to the stoichiometric and highly reduced surfaces. Terminations invoking the simultaneous occurrence of a full S-2 perpendicular-pair and a single S-atom from a broken tilted pair are not energetically favored, as predicted by the calculated formation enthalpies. The observed S-Ru bond strengthening at the surface for terminations with anionic vacancies is related to the increased hybridization between sulfur 3p-pi and ruthenium 4d bands. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:163 / 172
页数:10
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