Narrow polydispersity polymers for microlithography: Synthesis and properties

被引:16
作者
Barclay, GG
Hawker, CJ
Ito, H
Orellana, A
Malenfant, PRL
Sinta, RF
机构
来源
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIII | 1996年 / 2724卷
关键词
D O I
10.1117/12.241823
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The major component of a photoresist formulation is a matrix resin, which therefore has the greatest effect on resist performance. At deep-UV wavelengths the resins of choice are linear phenolic polymers, such as poly(4-hydroxystyrene) (PHOST), which have excellent absorption characteristics within the DUV region. This paper demonstrates the synthesis of a range of narrow polydispersity PHOST polymers (M(n) = 2,000 - 30,000; PD = 1.1 - 1.4) via a ''living'' radical polymerization technique. Further, the effects of polydispersity and molecular weight on the dissolution behavior and thermal properties of these polymers are reported.
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页码:249 / 260
页数:12
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