Photoconductive properties of polycrystalline diamond under high electric field strength

被引：7

作者：

Aikawa, Y ^{[1
]}

Baba, K ^{[1
]}

Shohata, N ^{[1
]}

Yoneda, H ^{[1
]}

Ueda, K ^{[1
]}

机构：

[1] UNIV ELECTROCOMMUN,INST LASER SCI,CHOFU,TOKYO 182,JAPAN

来源：

关键词：

photoconductivity; polycrystalline diamond; mobility-carrier lifetime product; opto-electronic switch; breakdown voltage;

D O I：

10.1016/0925-9635(95)00448-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photoconductive properties of a diamond opto-electronic switch made by chemical vapor deposition were investigated. A new configuration of the diamond gap was proposed to reduce the surface leakage current and avoid surface flashover. This technology made it possible to apply a static electric field with strengths up to 2 x 10(6) V cm(-1). The dependence of the mobility-lifetime product mu tau on the grain size was measured for a wide range of electric fields. The mu tau value was found to be linearly proportional to the electric field. Larger grain size samples had larger mu tau values. The grain size dependence was attributed to the decrease in the mobility and lifetime inside the grain. The sensitivity to UV light was also measured and was 0.3 A W-1 at 150 nm. This indicated that diamond films were applicable to UV photosensors.

引用

页码：737 / 740

页数：4