Relaxor ferroelectricity in strained epitaxial SrTiO3 thin films on DyScO3 substrates

被引:102
作者
Biegalski, M. D. [1 ]
Jia, Y.
Schlom, D. G.
Trolier-McKinstry, S.
Streiffer, S. K.
Sherman, V.
Uecker, R.
Reiche, P.
机构
[1] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[3] Ecole Polytech Fed Lausanne, Ceram Lab, CH-1015 Lausanne, Switzerland
[4] Inst Crystal Growth, D-12489 Berlin, Germany
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2198088
中图分类号
O59 [应用物理学];
学科分类号
摘要
The ferroelectric properties of 500 A thick strained, epitaxial SrTiO3 films grown on DyScO3 substrates by reactive molecular-beam epitaxy are reported. Despite the near 1% biaxial tensile strain, the x-ray rocking curve full widths at half maximum in omega are as narrow as 7 arc sec (0.002 degrees). The films show a frequency-dependent permittivity maximum near 250 K that is well fit by the Vogel-Fulcher equation. A clear polarization hysteresis is observed below the permittivity maximum, with an in-plane remanent polarization of 10 mu C/cm(2) at 77 K. The high T-max is consistent with the biaxial tensile strain state, while the superimposed relaxor behavior is likely due to defects.(c) 2006 American Institute of Physics.
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页数:3
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