Effects of MgO annealing process in a vacuum on the discharge characteristics of AC PDP

被引：34

作者：

Park, CH ^{[1
]}

Kim, YK

Park, BE

Lee, WG

Cho, JS

机构：

[1] Pusan Natl Univ, Coll Engn, Dept Elect Engn, Pusan 609735, South Korea

[2] LG Elect Inc, Mfg Technol Ctr, Kumi, Kyungsangbuk, South Korea

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 60卷 / 02期

关键词：

MgO thin film; e-beam evaporation; annealing process; surface discharge;

D O I：

10.1016/S0921-5107(99)00028-8

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

This paper deals with the relationships between various annealing conditions in a vacuum and the surface glow discharge characteristics on the MgO thin film prepared by e-beam evaporation method. The minimum discharge inception voltage is obtained for the sample annealed at 400 degrees C for about 2 h in a clean vacuum. Above the annealing temperature of 430 degrees C, cracks are founded on the MgO film, which results in higher discharge voltage. Moreover, the lower the annealing pressure, the lower the discharge voltage. The main factors that improves the discharge characteristics by annealing process is considered to be due to both the morphology changes or crystal structure of the MgO thin films and pumping impurities in the MgO him during the annealing process. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：149 / 155

页数：7

共 9 条

[1]

IR AND HIGH-ENERGY ELECTRON-DIFFRACTION ANALYSES OF ELECTRON-BEAM-EVAPORATED MGO FILMS [J].