Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance

被引：18

作者：

Rogalla, M ^{[1
]}

Runge, K ^{[1
]}

机构：

[1] Univ Freiburg, Fak Phys, D-79104 Freiburg, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 434卷 / 01期

关键词：

SI-GaAs; particle detectors; field-enhanced electron capture;

D O I：

10.1016/S0168-9002(99)00431-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A model for the electric field distribution beneath the Schottky contact in semi-insulating (SI) GaAs particle detectors is developed. The model is based on a field-enhanced electron capture of the EL2-defect. The influence of the compensation mechanism in SI-GaAs on the geld distribution, leakage current density and charge collection properties of the detectors will be discussed. The detailed understanding allows then a device optimization. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：44 / 56

页数：13

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